features low cost diffused junction low leakage l o w f o r w a r d v o l t a g e d r op high current capability and s im ilar s olvents mechanical data cas e:jedec do--15,m olded plas tic terminals: axial lead ,solderable per mil- std-202,method 208 polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phas e,half wave,60 hz,res is tive or inductive load. for capacitive load,derate by 20%. e r c 0 4 -06 e r c 0 4 -10 units maximum recurrent peak reverse voltage v rrm 600 1000 v max imum rms v olt age v rms 420 700 v max imum dc b lo c king v oltage v dc 600 1000 v maximum average forw ard rectif ied current 9 . 5 m m l ead l en g t h, @t a =75 peak forw ard surge current 8 . 3 m s s i ng l e h a l f - s i n e - w a v e s u pe r i m po s ed on r a t e d l oad @t j = 1 2 5 maximum instantaneous f orw ard voltage @ 4.0 a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 typical junction capacitance (note1) c j pf typical thermal resistance (note2) r ja <d operating junction temperature range t j storage temperature range t stg a 10 easily cleaned with freon,alcohol,isopropanol i f (a v ) 1 . 2 the plastic material carries u/l recognition 94v-0 a 100 i f s m a 5 0 n o t e : 1. m ea s u r ed at 1 . 0 m h z a n d app l ied re v er s e v ol t a ge of 4 . 0 v d c . - 55 ---- + 150 - 55---- + 150 i r 20 1 . 1 40 2 . t he r m a l r e s i s t an c e f r o m j u n c t io n to a m b i en t. p l a s t i c s i l i con r e c t i f i e r s 400 280 400 e r c 0 4 -04 e r c 0 4 - 0 2 - - - e r c 0 4 - 10 d o - 1 5 200 140 200 e r c 0 4 -02 voltage range: 200 --- 1000 v curr e n t : 1 . 2 a dimensions in millimeters diode semiconductor korea www.diode.kr
12 0 t j =125 8 . 3 m s s i n g l e h a l f s i n e - w a v e 2 4 108 100 40 60 80 0 20 40 60 80 100 120 140 160 0.5 0.6 t j =25 pulse width=300us 0.04 0.01 0.1 0.4 2 1.0 4 100 10 0.8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 1.9 .2 tj=25 f=1mhz 1 .1 2 4 .4 1.0 2 40 10 20 60 100 1 4 00 75 25 0 50 single phase half wave 60h z r e s i s t i v e or inductive load 100 125 175 150 0.2 0.4 0.8 0.6 1.0 1 . 2 amperes junction capacitance,pf amperes peak forward surge current amperes fig. 3 --current derati ng curve f i g .4 -- peak forward surge current nu m b e r o f c y c l e s a t 60 h z e rc 0 4 - 02 - -- e rc 0 4 - 10 i n s t a n t a n e o u s f o r w a r d v o l t a g e , v o l t s r e v e r se v o l t a g e , v o l t s ambient temperature, fi g. 1 -- forward characteristi c f i g . 2 - - junction ch a rac t e r i s t i cs peak forward surge current instantaneous forward current www.diode.kr diode semiconductor korea
|